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Manufacturer
Vishay SiliconixManufacturer Product Number
IRF820SPBF
Description
MOSFET N-CH 500V 2.5A D2PAK
Datasheet
IRF820SPBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 3Ohm @ 1.5A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 24 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 360 pF @ 25 V | |
| Maximum Power Dissipation | 3.1W (Ta), 50W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263 (D2PAK) | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Active
In-Stock: 50
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Quantity
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