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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF8113PBF
Description
HEXFET POWER MOSFET
Datasheet
IRF8113PBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 5.6mOhm @ 17.2A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.2V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 36 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 2910 pF @ 15 V | |
| Maximum Power Dissipation | 2.5W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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