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Manufacturer
Infineon TechnologiesManufacturer Product Number
BSS806NEH6327XTSA1
Description
MOSFET N-CH 20V 2.3A SOT23-3
Datasheet
BSS806NEH6327XTSA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | Automotive, AEC-Q101, HEXFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 1.8V, 2.5V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 57mOhm @ 2.3A, 2.5V | |
| Maximum Gate Threshold Voltage at Drain Current | 750mV @ 11µA | |
| Maximum Gate Charge (Qg) @ Vgs | 1.7 nC @ 2.5 V | |
| Maximum Gate-Source Voltage | ±8V | |
| Maximum Input Capacitance (Ciss) at Vds | 529 pF @ 10 V | |
| Maximum Power Dissipation | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT23 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
$0.05
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