SI2302CDS-T1-E3

Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.

Manufacturer

Vishay Siliconix

Manufacturer Product Number

SI2302CDS-T1-E3

Description

MOSFET N-CH 20V 2.6A SOT23-3

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)2.5V, 4.5V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage57mOhm @ 3.6A, 4.5V
Maximum Gate Threshold Voltage at Drain Current850mV @ 250µA
Maximum Gate Charge (Qg) @ Vgs5.5 nC @ 4.5 V
Maximum Gate-Source Voltage±8V
Maximum Power Dissipation710mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
$0.02

In-Stock: 40000

Check for Additional incoming Stock

Quantity