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Manufacturer
Vishay SiliconixManufacturer Product Number
SI2302CDS-T1-E3
Description
MOSFET N-CH 20V 2.6A SOT23-3
Datasheet
SI2302CDS-T1-E3 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | TrenchFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 2.5V, 4.5V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 57mOhm @ 3.6A, 4.5V | |
| Maximum Gate Threshold Voltage at Drain Current | 850mV @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 5.5 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | ±8V | |
| Maximum Power Dissipation | 710mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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