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Manufacturer
Vishay SiliconixManufacturer Product Number
SI2304DDS-T1-GE3
Description
MOSFET N-CH 30V 3.3A/3.6A SOT23
Datasheet
SI2304DDS-T1-GE3 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | TrenchFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta), 3.6A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 60mOhm @ 3.2A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.2V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 6.7 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 235 pF @ 15 V | |
| Maximum Power Dissipation | 1.1W (Ta), 1.7W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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