SI2301CDS-T1-E3

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Manufacturer

Vishay Siliconix

Manufacturer Product Number

SI2301CDS-T1-E3

Description

MOSFET P-CH 20V 3.1A SOT23-3

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)2.5V, 4.5V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage112mOhm @ 2.8A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs10 nC @ 4.5 V
Maximum Gate-Source Voltage±8V
Maximum Input Capacitance (Ciss) at Vds405 pF @ 10 V
Maximum Power Dissipation860mW (Ta), 1.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
$0.08

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