SI2333DDS-T1-GE3

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Manufacturer

Vishay Siliconix

Manufacturer Product Number

SI2333DDS-T1-GE3

Description

MOSFET P-CH 12V 6A SOT23-3

Product Attributes

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Model SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)1.5V, 4.5V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage28mOhm @ 5A, 4.5V
Maximum Gate Threshold Voltage at Drain Current1V @ 250µA
Maximum Gate Charge (Qg) @ Vgs35 nC @ 8 V
Maximum Gate-Source Voltage±8V
Maximum Input Capacitance (Ciss) at Vds1275 pF @ 6 V
Maximum Power Dissipation1.2W (Ta), 1.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
$0.08

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