IRF820

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Manufacturer

STMicroelectronics

Manufacturer Product Number

IRF820

Description

MOSFET N-CH 500V 4A TO220AB

Product Attributes

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Model SeriesPowerMESH™ II
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage3Ohm @ 1.5A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 250µA
Maximum Gate Charge (Qg) @ Vgs17 nC @ 10 V
Maximum Gate-Source Voltage±30V
Maximum Input Capacitance (Ciss) at Vds315 pF @ 25 V
Maximum Power Dissipation80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
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