IRF7101PBF

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Manufacturer Product Number

IRF7101PBF

Description

HEXFET POWER MOSFET

Product Attributes

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Model SeriesHEXFET®
PackageBulk
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.5A
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage100mOhm @ 1.8A, 10V
Maximum Gate Threshold Voltage at Drain Current3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs15nC @ 10V
Maximum Input Capacitance (Ciss) at Vds320pF @ 15V
Maximum Power2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
$0.11

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