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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPG20N06S2L65ATMA1
Description
MOSFET 2N-CH 55V 20A TDSON-8-4
Datasheet
IPG20N06S2L65ATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | Automotive, AEC-Q101, OptiMOS™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 20A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 65mOhm @ 15A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2V @ 14µA | |
| Maximum Gate Charge (Qg) @ Vgs | 12nC @ 10V | |
| Maximum Input Capacitance (Ciss) at Vds | 410pF @ 25V | |
| Maximum Power | 43W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | PG-TDSON-8-4 |
$0.56
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