IPG20N06S2L65ATMA1

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Manufacturer Product Number

IPG20N06S2L65ATMA1

Description

MOSFET 2N-CH 55V 20A TDSON-8-4

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesAutomotive, AEC-Q101, OptiMOS™
PackageTape & Reel (TR)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C20A
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage65mOhm @ 15A, 10V
Maximum Gate Threshold Voltage at Drain Current2V @ 14µA
Maximum Gate Charge (Qg) @ Vgs12nC @ 10V
Maximum Input Capacitance (Ciss) at Vds410pF @ 25V
Maximum Power43W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4
$0.56

In-Stock: 9498

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