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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF7101PBF
Description
MOSFET 2N-CH 20V 3.5A 8-SOIC
Datasheet
IRF7101PBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tube | |
| Part Status | Discontinued at | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.5A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 100mOhm @ 1.8A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 15nC @ 10V | |
| Maximum Input Capacitance (Ciss) at Vds | 320pF @ 15V | |
| Maximum Power | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
$0.14
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