IRF6725MTRPBF

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Manufacturer Product Number

IRF6725MTRPBF

Description

DIRECTFET POWER MOSFET

Product Attributes

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Model SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C28A (Ta), 170A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage2.2mOhm @ 28A, 10V
Maximum Gate Threshold Voltage at Drain Current2.35V @ 100µA
Maximum Gate Charge (Qg) @ Vgs54 nC @ 4.5 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds4700 pF @ 15 V
Maximum Power Dissipation2.8W (Ta), 100W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX
Active

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