IRF6775MTRPBF

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Manufacturer Product Number

IRF6775MTRPBF

Description

IRF6775 - 12V-300V N-CHANNEL POW

Product Attributes

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Model SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta), 28A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage56mOhm @ 5.6A, 10V
Maximum Gate Threshold Voltage at Drain Current5V @ 100µA
Maximum Gate Charge (Qg) @ Vgs36 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1411 pF @ 25 V
Maximum Power Dissipation2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MZ
Package / CaseDirectFET™ Isometric MZ
$0.70

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