2N6660-E3

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Manufacturer

Vishay Siliconix

Manufacturer Product Number

2N6660-E3

Description

MOSFET N-CH 60V 990MA TO205AD

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C990mA (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage3Ohm @ 1A, 10V
Maximum Gate Threshold Voltage at Drain Current2V @ 1mA
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds50 pF @ 25 V
Maximum Power Dissipation725mW (Ta), 6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AD (TO-39)
Package / CaseTO-205AD, TO-39-3 Metal Can
$0.42

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