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Manufacturer
Renesas Electronics America Inc.Manufacturer Product Number
NP32N055SDE-E1-AZ
Description
NP32N055SDE-E1-AZ - MOS FIELD EF
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 24mOhm @ 16A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.5V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 41 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 2000 pF @ 25 V | |
| Maximum Power Dissipation | 1.2W (Ta), 66W (Tc) | |
| Operating Temperature | 175°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-252 (MP-3ZK) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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