NP32N055SDE-E1-AZ

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Manufacturer Product Number

NP32N055SDE-E1-AZ

Description

NP32N055SDE-E1-AZ - MOS FIELD EF

Datasheet

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Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage24mOhm @ 16A, 10V
Maximum Gate Threshold Voltage at Drain Current2.5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs41 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds2000 pF @ 25 V
Maximum Power Dissipation1.2W (Ta), 66W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (MP-3ZK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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In-Stock: 25000

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