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Manufacturer
Renesas Electronics America Inc.Manufacturer Product Number
2SK4150TZ-E
Description
2SK4150TZ - N-CHANNEL POWER MOSF
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 250 V | |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 2.5V, 4V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 5.7Ohm @ 200mA, 4V | |
| Maximum Gate Threshold Voltage at Drain Current | 1.5V @ 1mA | |
| Maximum Gate Charge (Qg) @ Vgs | 3.7 nC @ 4 V | |
| Maximum Gate-Source Voltage | ±10V | |
| Maximum Input Capacitance (Ciss) at Vds | 80 pF @ 25 V | |
| Maximum Power Dissipation | 750mW (Ta) | |
| Operating Temperature | 150°C | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-92 | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
$0.11
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