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Manufacturer
Renesas Electronics America Inc.Manufacturer Product Number
RJK6002DPH-E0#T2
Description
RJK6002DPH - N CHANNEL MOSFET
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 6.8Ohm @ 1A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4.5V @ 1mA | |
| Maximum Gate Charge (Qg) @ Vgs | 6.2 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±30V | |
| Maximum Input Capacitance (Ciss) at Vds | 165 pF @ 25 V | |
| Maximum Power Dissipation | 30W (Tc) | |
| Operating Temperature | 150°C | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-251 | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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