
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Renesas Electronics America Inc.Manufacturer Product Number
NP100P06PDG-E1-AY
Description
MOSFET P-CH 60V 100A TO263
Datasheet
NP100P06PDG-E1-AY Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 6mOhm @ 50A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.5V @ 1mA | |
| Maximum Gate Charge (Qg) @ Vgs | 300 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 15000 pF @ 10 V | |
| Maximum Power Dissipation | 1.8W (Ta), 200W (Tc) | |
| Operating Temperature | 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
$2.80
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