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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF7106
Description
MOSFET N/P-CH 20V 3A/2.5A 8-SOIC
Datasheet
IRF7106 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tube | |
| Part Status | Obsolete | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | N and P-Channel | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 125mOhm @ 1A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 1V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 25nC @ 10V | |
| Maximum Input Capacitance (Ciss) at Vds | 300pF @ 15V | |
| Maximum Power | 2W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
$0.28
In-Stock: 490
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Quantity
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