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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPB017N10N5ATMA1
Description
MOSFET N-CH 100V 180A TO263-7
Datasheet
IPB017N10N5ATMA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 6V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 1.7mOhm @ 100A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3.8V @ 279µA | |
| Maximum Gate Charge (Qg) @ Vgs | 210 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 15600 pF @ 50 V | |
| Maximum Power Dissipation | 375W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-7 | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
$3.71
In-Stock: 3420
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Quantity
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