IPB64N25S320ATMA1

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Manufacturer Product Number

IPB64N25S320ATMA1

Description

MOSFET N-CH 250V 64A TO263-3

Product Attributes

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Model SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage20mOhm @ 64A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 270µA
Maximum Gate Charge (Qg) @ Vgs89 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds7000 pF @ 25 V
Maximum Power Dissipation300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
$5.60

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