FCP850N80Z

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Manufacturer

onsemi

Manufacturer Product Number

FCP850N80Z

Description

MOSFET N-CH 800V 8A TO220-3

Product Attributes

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Model SeriesSuperFET® II
PackageTube
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage850mOhm @ 3A, 10V
Maximum Gate Threshold Voltage at Drain Current4.5V @ 600µA
Maximum Gate Charge (Qg) @ Vgs29 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1315 pF @ 100 V
Maximum Power Dissipation136W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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