IPB015N08N5ATMA1

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Manufacturer Product Number

IPB015N08N5ATMA1

Description

MOSFET N-CH 80V 180A TO263-7

Product Attributes

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Model SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)6V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage1.5mOhm @ 100A, 10V
Maximum Gate Threshold Voltage at Drain Current3.8V @ 279µA
Maximum Gate Charge (Qg) @ Vgs222 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds16900 pF @ 40 V
Maximum Power Dissipation375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
$3.36

In-Stock: 6111

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