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Manufacturer
Microsemi CorporationManufacturer Product Number
APT80SM120J
Description
SICFET N-CH 1200V 51A SOT227
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 20V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 55mOhm @ 40A, 20V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.5V @ 1mA | |
| Maximum Gate Charge (Qg) @ Vgs | 235 nC @ 20 V | |
| Maximum Gate-Source Voltage | +25V, -10V | |
| Maximum Power Dissipation | 273W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | SOT-227 | |
| Package / Case | SOT-227-4, miniBLOC |
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