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Manufacturer
Microsemi CorporationManufacturer Product Number
MSC040SMA120B
Description
SICFET N-CH 1200V 66A TO247-3
Datasheet
MSC040SMA120B Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 20V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 50mOhm @ 40A, 20V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.7V @ 2mA | |
| Maximum Gate Charge (Qg) @ Vgs | 137 nC @ 20 V | |
| Maximum Gate-Source Voltage | +23V, -10V | |
| Maximum Input Capacitance (Ciss) at Vds | 1990 pF @ 1000 V | |
| Maximum Power Dissipation | 323W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
$25.18
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