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Manufacturer
Microsemi CorporationManufacturer Product Number
APT9M100S
Description
MOSFET N-CH 1000V 9A D3PAK
Datasheet
APT9M100S Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | POWER MOS 8™ | |
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000 V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 1.4Ohm @ 5A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 5V @ 1mA | |
| Maximum Gate Charge (Qg) @ Vgs | 80 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±30V | |
| Maximum Input Capacitance (Ciss) at Vds | 2605 pF @ 25 V | |
| Maximum Power Dissipation | 335W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D3PAK | |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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