APT80SM120B

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Manufacturer Product Number

APT80SM120B

Description

SICFET N-CH 1200V 80A TO247

Product Attributes

TYPEDescriptionSELECT ALL
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)20V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage55mOhm @ 40A, 20V
Maximum Gate Threshold Voltage at Drain Current2.5V @ 1mA
Maximum Gate Charge (Qg) @ Vgs235 nC @ 20 V
Maximum Gate-Source Voltage+25V, -10V
Maximum Power Dissipation555W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
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