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Manufacturer
Microsemi CorporationManufacturer Product Number
APT66M60B2
Description
MOSFET N-CH 600V 70A T-MAX
Datasheet
APT66M60B2 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 100mOhm @ 33A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 5V @ 2.5mA | |
| Maximum Gate Charge (Qg) @ Vgs | 330 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±30V | |
| Maximum Input Capacitance (Ciss) at Vds | 13190 pF @ 25 V | |
| Maximum Power Dissipation | 1135W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | T-MAX™ [B2] | |
| Package / Case | TO-247-3 Variant |
$1.12
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