Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Infineon TechnologiesManufacturer Product Number
IRL60B216
Description
MOSFET N-CH 60V 195A TO220AB
Datasheet
IRL60B216 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET®, StrongIRFET™ | |
| Package | Tube | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 1.9mOhm @ 100A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.4V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 258 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 15570 pF @ 25 V | |
| Maximum Power Dissipation | 375W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
$1.40
In-Stock: 2903
Check for Additional incoming Stock
Quantity
Related Products
Popular Parts Number
| Mfr Part # | Price (tag) | Quantity Available |
|---|---|---|
 FCP850N80ZMOSFET N-CH 800V 8A TO220-3 | 2.24 | 11470 Marketplace |
 FCH041N65EFL4POWER FIELD-EFFECT TRANSISTOR, N | 13.99 | 5632 Marketplace |
 FCP850N80ZMOSFET N-CH 800V 8A TO220-3 | Active | Scheduled Orders Marketplace |
 FCH041N65EFL4MOSFET N-CH 650V 76A TO247 | Active | Scheduled Orders Marketplace |
 STTH310UFYDIODE GEN PURP 1KV 3A SMBFLAT | 0.56 | 52000 Marketplace |
