IRF9335PBF

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Manufacturer Product Number

IRF9335PBF

Description

AUTOMOTIVE HEXFET P-CHANNEL POWE

Product Attributes

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Model SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C5.4A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage59mOhm @ 5.4A, 10V
Maximum Gate Threshold Voltage at Drain Current2.4V @ 10µA
Maximum Gate Charge (Qg) @ Vgs14 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds386 pF @ 25 V
Maximum Power Dissipation2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)
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