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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF9335PBF
Description
MOSFET P-CH 30V 5.4A 8SO
Datasheet
IRF9335PBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tube | |
| Part Status | Discontinued at | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 59mOhm @ 5.4A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.4V @ 10µA | |
| Maximum Gate Charge (Qg) @ Vgs | 14 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 386 pF @ 25 V | |
| Maximum Power Dissipation | 2.5W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
$0.42
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