IRF8113TRPBF

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Manufacturer Product Number

IRF8113TRPBF

Description

MOSFET N-CH 30V 17.2A 8SO

Product Attributes

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Model SeriesHEXFET®
PackageTape & Reel (TR)
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C17.2A (Ta)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage5.6mOhm @ 17.2A, 10V
Maximum Gate Threshold Voltage at Drain Current2.2V @ 250µA
Maximum Gate Charge (Qg) @ Vgs36 nC @ 4.5 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds2910 pF @ 15 V
Maximum Power Dissipation2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)
$0.42

In-Stock: 268680

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