IRF7907PBF

Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.

Manufacturer Product Number

IRF7907PBF

Description

MOSFET 2N-CH 30V 9.1A/11A 8SOIC

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesHEXFET®
PackageTube
Part StatusDiscontinued at
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.1A, 11A
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage16.4mOhm @ 9.1A, 10V
Maximum Gate Threshold Voltage at Drain Current2.35V @ 25µA
Maximum Gate Charge (Qg) @ Vgs10nC @ 4.5V
Maximum Input Capacitance (Ciss) at Vds850pF @ 15V
Maximum Power2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
$0.42

In-Stock: 25234

Check for Additional incoming Stock

Quantity