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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF7902TRPBF
Description
HEXFET POWER MOSFET
Datasheet
IRF7902TRPBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Bulk | |
| Part Status | Active | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta), 9.7A (Ta) | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.25V @ 25µA | |
| Maximum Gate Charge (Qg) @ Vgs | 6.9nC @ 4.5V, 9.8nC @ 4.5V | |
| Maximum Input Capacitance (Ciss) at Vds | 580pF @ 15V, 900pF @ 15V | |
| Maximum Power | 1.4W (Ta), 2W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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