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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF7901D1
Description
MOSFET 2N-CH 30V 6.2A 8SOIC
Datasheet
IRF7901D1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | FETKY™ | |
| Package | Tube | |
| Part Status | Obsolete | |
| Technology | MOSFET (Metal Oxide) | |
| FET Feature | Logic Level Gate | |
| Configuration | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 6.2A | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 38mOhm @ 5A, 4.5V | |
| Maximum Gate Threshold Voltage at Drain Current | 1V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 10.5nC @ 5V | |
| Maximum Input Capacitance (Ciss) at Vds | 780pF @ 16V | |
| Maximum Power | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
$0.14
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