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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF6665TR1
Description
MOSFET N-CH 100V 4.2A DIRECTFET
Datasheet
IRF6665TR1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 62mOhm @ 5A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 5V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 13 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 530 pF @ 25 V | |
| Maximum Power Dissipation | 2.2W (Ta), 42W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DIRECTFET™ SH | |
| Package / Case | DirectFET™ Isometric SH |
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In-Stock: 1000
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Quantity
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