IRF6645

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Manufacturer Product Number

IRF6645

Description

MOSFET N-CH 100V 5.7A DIRECTFET

Product Attributes

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Model SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C5.7A (Ta), 25A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage35mOhm @ 5.7A, 10V
Maximum Gate Threshold Voltage at Drain Current4.9V @ 50µA
Maximum Gate Charge (Qg) @ Vgs20 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds890 pF @ 25 V
Maximum Power Dissipation3W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ SJ
Package / CaseDirectFET™ Isometric SJ
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