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Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF6618TR1
Description
MOSFET N-CH 30V 30A DIRECTFET
Datasheet
IRF6618TR1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 170A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 2.2mOhm @ 30A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.35V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 65 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 5640 pF @ 15 V | |
| Maximum Power Dissipation | 2.8W (Ta), 89W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DIRECTFET™ MT | |
| Package / Case | DirectFET™ Isometric MT |
$1.12
In-Stock: 5450
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