IRF6608

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Manufacturer Product Number

IRF6608

Description

MOSFET N-CH 30V 13A DIRECTFET

Product Attributes

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Model SeriesHEXFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 55A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage9mOhm @ 13A, 10V
Maximum Gate Threshold Voltage at Drain Current3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs24 nC @ 4.5 V
Maximum Gate-Source Voltage±12V
Maximum Input Capacitance (Ciss) at Vds2120 pF @ 15 V
Maximum Power Dissipation2.1W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ ST
Package / CaseDirectFET™ Isometric ST
$0.84

In-Stock: 500

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