Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Infineon TechnologiesManufacturer Product Number
IRF6614TR1PBF
Description
MOSFET N-CH 40V 12.7A DIRECTFET
Datasheet
IRF6614TR1PBF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | HEXFET® | |
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 55A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 8.3mOhm @ 12.7A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2.25V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 29 nC @ 4.5 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 2560 pF @ 20 V | |
| Maximum Power Dissipation | 2.1W (Ta), 42W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DIRECTFET™ ST | |
| Package / Case | DirectFET™ Isometric ST |
$4.20
In-Stock: Scheduled Orders
Check for Additional incoming Stock
Quantity
Related Products
Popular Parts Number
