IRF6602

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Manufacturer Product Number

IRF6602

Description

MOSFET N-CH 20V 11A DIRECTFET

Product Attributes

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Model SeriesHEXFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 48A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage13mOhm @ 11A, 10V
Maximum Gate Threshold Voltage at Drain Current2.3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs18 nC @ 4.5 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1420 pF @ 10 V
Maximum Power Dissipation2.3W (Ta), 42W (Tc)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MQ
Package / CaseDirectFET™ Isometric MQ
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