IPW65R019C7

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Manufacturer Product Number

IPW65R019C7

Description

75A, 650V, 0.019OHM, N-CHANNEL M

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesCoolMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage19mOhm @ 58.3A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 2.92mA
Maximum Gate Charge (Qg) @ Vgs215 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds9900 pF @ 400 V
Maximum Power Dissipation446W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3
$1.40

In-Stock: 77

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