IPW60R125P6

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Manufacturer Product Number

IPW60R125P6

Description

POWER FIELD-EFFECT TRANSISTOR

Product Attributes

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Model SeriesCoolMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage125mOhm @ 11.6A, 10V
Maximum Gate Threshold Voltage at Drain Current4.5V @ 960µA
Maximum Gate Charge (Qg) @ Vgs56 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds2660 pF @ 100 V
Maximum Power Dissipation219W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3
$4.20

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