IPT60R028G7XTMA1

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Manufacturer Product Number

IPT60R028G7XTMA1

Description

MOSFET N-CH 600V 75A 8HSOF

Product Attributes

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Model SeriesCoolMOS™ G7
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage28mOhm @ 28.8A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 1.44mA
Maximum Gate Charge (Qg) @ Vgs123 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds4820 pF @ 400 V
Maximum Power Dissipation391W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-2
Package / Case8-PowerSFN
$8.39

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