IPT111N20NFDATMA1

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Manufacturer Product Number

IPT111N20NFDATMA1

Description

MOSFET N-CH 200V 96A 8HSOF

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage11.1mOhm @ 96A, 10V
Maximum Gate Threshold Voltage at Drain Current4V @ 267µA
Maximum Gate Charge (Qg) @ Vgs87 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds7000 pF @ 100 V
Maximum Power Dissipation375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN
$2.38

In-Stock: 3000

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