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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPP65R225C7XKSA1
Description
MOSFET N-CH 650V 11A TO220-3
Datasheet
IPP65R225C7XKSA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | CoolMOS™ C7 | |
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 225mOhm @ 4.8A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 4V @ 240µA | |
| Maximum Gate Charge (Qg) @ Vgs | 20 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 996 pF @ 400 V | |
| Maximum Power Dissipation | 63W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3 | |
| Package / Case | TO-220-3 |
$2.52
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