IPP086N10N3

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Manufacturer Product Number

IPP086N10N3

Description

N-CHANNEL POWER MOSFET

Product Attributes

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Model SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)6V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage8.6mOhm @ 73A, 10V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 75µA
Maximum Gate Charge (Qg) @ Vgs55 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds3980 pF @ 50 V
Maximum Power Dissipation125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3
$0.56

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