IPN95R3K7P7ATMA1

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Manufacturer Product Number

IPN95R3K7P7ATMA1

Description

MOSFET N-CH 950V 2A SOT223

Product Attributes

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Model SeriesCoolMOS™ P7
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage3.7Ohm @ 800mA, 10V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 40µA
Maximum Gate Charge (Qg) @ Vgs6 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds196 pF @ 400 V
Maximum Power Dissipation6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-4, TO-261AA
$1.40

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