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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPP086N10N3GHKSA1
Description
MOSFET N-CH 100V 80A TO220-3
Datasheet
IPP086N10N3GHKSA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ | |
| Package | Tube | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 6V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 8.6mOhm @ 73A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3.5V @ 75µA | |
| Maximum Gate Charge (Qg) @ Vgs | 55 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 3980 pF @ 50 V | |
| Maximum Power Dissipation | 125W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3 | |
| Package / Case | TO-220-3 |
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