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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPP076N15N5AKSA1
Description
MOSFET N-CH 150V 112A TO220-3
Datasheet
IPP076N15N5AKSA1 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ 5 | |
| Package | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 150 V | |
| Current - Continuous Drain (Id) @ 25°C | 112A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 8V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 7.6mOhm @ 56A, 10 | |
| Maximum Gate Threshold Voltage at Drain Current | 4.6V @ 160µA | |
| Maximum Gate Charge (Qg) @ Vgs | 21 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 4700 pF @ 75 V | |
| FET Feature | Standard | |
| Maximum Power Dissipation | 214W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3 | |
| Package / Case | TO-220-3 |
$2.10
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